Quasi-Fermi levels in MSM structureMAŁACHOWSKI, M. J; STEPNIEWSKI, J.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 820-823, issn 0038-1101Article

A precise scaling length for depleted regionsSCHRIMPF, R. D; WARNER, R. M. JR.Solid-state electronics. 1985, Vol 28, Num 8, pp 779-782, issn 0038-1101Article

Boundary element method for calculation of depletion layer profilesCUYPERS, F; DE MEY, G.Electronics Letters. 1984, Vol 20, Num 6, pp 229-230, issn 0013-5194Article

Sperrschichten in Halbleiterbauelementen = Couches d'appauvrissement dans les dispositifs semiconducteurs = Depletion layers in semiconductor devicesZSCHAUER, K.-H.Siemens Forschungs- und Entwicklungsberichte. 1986, Vol 15, Num 6, pp 291-295, issn 0370-9736Article

Maximum depletion width of MOS structures at high inversionLEHOVEC, K.Solid-state electronics. 1985, Vol 28, Num 5, pp 531-532, issn 0038-1101Article

Determination of semiconductor parameters and of the vertical structure of devices by numerical analysis of energy-dependent EBIC measurementsKITTLER, M; SCHRÖDER, K.-W.Physica status solidi. A. Applied research. 1983, Vol 77, Num 1, pp 139-151, issn 0031-8965Article

Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diodeTENG, K. W; LI, S. S.Solid-state electronics. 1985, Vol 28, Num 3, pp 277-285, issn 0038-1101Article

A new structure for in-depth history effect characterization on partially depleted SOI transistorsFAYNOT, O; POIROUX, T; CLUZEL, J et al.IEEE International SOI conference. 2002, pp 35-36, isbn 0-7803-7439-8, 2 p.Conference Paper

A new relaxation effect with polymer depletion layersDONATH, E; WALTHER, D; KRABI, D et al.Langmuir. 1996, Vol 12, Num 26, pp 6263-6269, issn 0743-7463Article

CAPACITIVE EQUIVALENT CIRCUIT OF THE DEPLETION LAYER OF A MOS TRANSISTOR USED FOR DETERMINATION OF IMPURITY CONCENTRATION NEAR INSULATOR-SEMICONDUCTOR INTERFACE.LE BLOA A; FORTIN B.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. 653-662; ABS. FR.; BIBL. 7 REF.Article

DIRECT OBSERVATION OF THE DEPLETION LAYER IN A MULTICHANNEL VERTICAL J.F.E.T. (M.J.F.E.T.).OGAWA H; ABE A; NAKAJIMA T et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 10; PP. 223-225; BIBL. 4 REF.Article

DEPLETION-LAYER CHARACTERISATION OF SINGLE-DIFFUSED P-N JUNCTIONS.BASAVARAJ TN; BHATTACHARYYA AB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 765-767; BIBL. 11 REF.Article

EFFICIENCY ENHANCEMENT IN AVALANCHE DIODES BY DEPLETION-REGION-WIDTH MODULATION.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 435-436; BIBL. 3 REF.Article

MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF SILICON READ DIODES WITH WIDE DEPLETION REGIONS.BEHRENDT R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 489-498; ABS. ALLEM.; BIBL. 12 REF.Article

THE BURIED CHANNEL CHARGE COUPLED DEVICEWALDEN RH; KRAMBECK RH; STRAIN RJ et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 7; PP. 1635-1640; BIBL. 9 REF.Serial Issue

TRANSITION-CAPACITANCE CALCULATIONS FOR DOUBLE-DIFFUSED P-N JUNCTIONSBHATTACHARYA AB; BASAVARAJ TN.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 467-476; BIBL. 31 REF.Serial Issue

DEPLETION REGION THICKNESSES IN DIFFUSED JUNCTIONSSTEVENS EH.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 7; PP. 659-660; BIBL. 7 REF.Serial Issue

RESEARCH NOTES: DEPLETION WIDTH FOR INHOMOGENEOUSLY DOPED P-N JUNCTIONJAIN YK; SHARMA SC.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 2; PP. 285-287; BIBL. 2 REF.Serial Issue

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

Demonstration of charge-coupled devices in fully depleted SOISAGE, J. P; BOLKHOVSKY, V; OLIVER, W. D et al.IEEE international SOI conference. 2004, pp 130-132, isbn 0-7803-8497-0, 1Vol, 3 p.Conference Paper

A study of polymer depletion layers by electrophoresis : The influence of viscosity profiles and the nonlinearity of the Poisson-Boltzmann equationDONATH, E; KRABI, A; ALLAN, G et al.Langmuir. 1996, Vol 12, Num 14, pp 3425-3430, issn 0743-7463Article

Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layerZACHAU, M; KOCH, F; PLOOG, K et al.Solid state communications. 1986, Vol 59, Num 8, pp 591-594, issn 0038-1098Article

Dynamique de la région appauvrie dans un semiconducteur à impureté ioniséeTSYRLIN, L. EH.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 3, pp 450-454, issn 0044-4642Article

The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier densityDAS, B; MCGINNIS, S; MELLOCH, M. R et al.Microelectronics journal. 2000, Vol 31, Num 2, pp 117-121, issn 0959-8324Article

Hot-carrier-induced degradation on 0.1μm SOI CMOSFETYEH, Wen-Kuan; WANG, Wen-Han; FANG, Yean-Kuen et al.IEEE International SOI conference. 2002, pp 107-108, isbn 0-7803-7439-8, 2 p.Conference Paper